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  1. Science in China Series : Information Sciences
  2. Science in China Series : Information Sciences : Volume 54
  3. Science in China Series : Information Sciences : Volume 54, Issue 5, May 2011
  4. Resistance switching for RRAM applications
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Science in China Series : Information Sciences : Volume 61
Science in China Series : Information Sciences : Volume 60
Science in China Series : Information Sciences : Volume 59
Science in China Series : Information Sciences : Volume 58
Science in China Series : Information Sciences : Volume 57
Science in China Series : Information Sciences : Volume 56
Science in China Series : Information Sciences : Volume 55
Science in China Series : Information Sciences : Volume 54
Science in China Series : Information Sciences : Volume 54, Issue 12, December 2011
Science in China Series : Information Sciences : Volume 54, Issue 11, November 2011
Science in China Series : Information Sciences : Volume 54, Issue 10, October 2011
Science in China Series : Information Sciences : Volume 54, Issue 9, September 2011
Science in China Series : Information Sciences : Volume 54, Issue 8, August 2011
Science in China Series : Information Sciences : Volume 54, Issue 7, July 2011
Science in China Series : Information Sciences : Volume 54, Issue 6, June 2011
Science in China Series : Information Sciences : Volume 54, Issue 5, May 2011
Editor’s note
The driving force for development of IC and system in future: Reducing the power consumption and improving the ratio of performance to power consumption
Variability in nanoscale CMOS technology
Advanced strain engineering for state-of-the-art nanoscale CMOS technology
Next-generation lithography for 22 and 16 nm technology nodes and beyond
Inelastic electron tunneling spectroscopy (IETS) study of high-k gate dielectrics
Ultra-thin films and multigate devices architectures for future CMOS scaling
Si nanowire FET and its modeling
3D integration review
RF/wireless-interconnect: The next wave of connectivity
State-of-the-art flash memory devices and post-flash emerging memories
Phase change memory
Resistance switching for RRAM applications
High power devices in wide bandgap semiconductors
Low power 3.1–10.6 GHz IR-UWB transmitter for Gbps wireless communications
Science in China Series : Information Sciences : Volume 54, Issue 4, April 2011
Science in China Series : Information Sciences : Volume 54, Issue 3, March 2011
Science in China Series : Information Sciences : Volume 54, Issue 2, February 2011
Science in China Series : Information Sciences : Volume 54, Issue 1, January 2011
Science in China Series : Information Sciences : Volume 53
Science in China Series : Information Sciences : Volume 52
Science in China Series : Information Sciences : Volume 51
Science in China Series : Information Sciences : Volume 50
Science in China Series : Information Sciences : Volume 49
Science in China Series : Information Sciences : Volume 48
Science in China Series : Information Sciences : Volume 47
Science in China Series : Information Sciences : Volume 46
Science in China Series : Information Sciences : Volume 45
Science in China Series : Information Sciences : Volume 44

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Resistance switching for RRAM applications

Content Provider Springer Nature Link
Author Chen, Frederick T. Lee, HengYuan Chen, YuSheng Hsu, YenYa Zhang, LiJie Chen, PangShiu Chen, WeiSu Gu, PeiYi Liu, WenHsing Wang, SuMin Tsai, ChenHan Sheu, ShyhShyuan Tsai, MingJinn Huang, Ru
Copyright Year 2011
Abstract Resistive random access memory (RRAM or ReRAM) is a non-volatile memory (NVM) technology that consumes minimal energy while offering sub-nanosecond switching. In addition, the data stability against high temperature and cycling wear is very robust, allowing new NVM applications in a variety of markets (automotive, embedded, storage, RAM). Based on sudden conduction through oxide insulators, the characteristics of RRAM technology have still yet to be fully described. In this paper, we present our current understanding of this very promising technology.
Starting Page 1073
Ending Page 1086
Page Count 14
File Format PDF
ISSN 1674733X
Journal Science in China Series : Information Sciences
Volume Number 54
Issue Number 5
e-ISSN 18691919
Language English
Publisher SP Science China Press
Publisher Date 2011-05-05
Publisher Place Heidelberg
Access Restriction One Nation One Subscription (ONOS)
Subject Keyword random access memory storage oxide breakdown oxygen vacancies Information Systems and Communication Service
Content Type Text
Resource Type Article
Subject Computer Science
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