NDLI: ECR Plasma in Growth of Cubic GaN by Low Pressure MOCVD

Content Provider	Springer Nature Link
Author	Gu, Biao Xu, Yin Qin, Fu Wen Wang, San Sheng Sui, Yu Wang, Zhan Guo
Copyright Year	2002
Abstract	To heteroepitaxally grow the crystalline cubic-GaN (c-GaN) film on the substrates with large lattice mismatch is basically important for fabricating the blue or ultra-violet laser diodes based on cubic group III nitride materials. We have obtained the crystalline c-GaN film and the heteroepitaxial interface between c-Gan and GaAs(001) substrate by the ECR Plasma-Assisted Metal Organic Chemical Vapor Deposition (PA-MOCVD) under low-pressure and low-temperature (∼600°C) on a homemade ECR-plasma Semiconductor Processing Device (ESPD). In order to decrease the growth temperature, the ECR plasma source was adopted as the activated nitrogen source, therefore the working pressure of MOCVD was decreased down to the region less than 1 Pa. To eliminate the damages from energetic ions of current plasma source, a Multi-cusp cavity-coupling ECR Plasma source (MEP) was selected to use in our experiment. To decrease the strain and dislocations induced from the large lattice mismatch between c-GaN and GaAs substrate, the plasma pretreatment procedure i.e., the initial growth technique was investigated. The experiment arrangements, the characteristics of plasma and the growth procedure, the characteristics of c-GaN film and interface between c-GaN and GaAs(001), and the roles of ECR plasma are described in this contribution.
Starting Page	159
Ending Page	174
Page Count	16
File Format	PDF
ISSN	02724324
Journal	Plasma Chemistry and Plasma Processing
Volume Number	22
Issue Number	1
e-ISSN	15728986
Language	English
Publisher	Kluwer Academic Publishers-Plenum Publishers
Publisher Date	2002-01-01
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Mechanics Characterization and Evaluation of Materials Mechanical Engineering Inorganic Chemistry Nuclear Physics, Heavy Ions, Hadrons
Content Type	Text
Resource Type	Article
Subject	Chemistry Surfaces, Coatings and Films Condensed Matter Physics Chemical Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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