NDLI: Studies of InAs/GaAs quantum dot laser grown by gas source molecular beam epitaxy

Content Provider	Springer Nature Link
Author	Li, S. G. Gong, Q. Wang, X. Z. Cao, C. F. Zhou, Z. W. Shen, X. X. He, K.
Copyright Year	2016
Abstract	We reported on growth conditions of InAs/GaAs quantum dots laser grown by gas source molecular beam epitaxy. It was found that the uniformity and size of dots had a close collection with growth temperature and thicknesses of InAs layer. As the increase of growth temperature, the emission wavelength kept red shift and line width of emission spectra also increased. Good uniformity of QD could be easily obtained with a relative lower growth temperature of 425 °C. At a higher growth temperature of 500 °C, a wider tunable region of 129.9 nm was observed by adjusting the thicknesses of InAs layers. Comparison with a normal capping process, the growth interruption of capping materials would not lead to the formed dots collapse. An available growth temperature of 425 °C was obtained to achieve good performances of InAs/GaAs quantum dot laser, which had one facet power more than 103 mW under continuous wave mode.
Starting Page	1
Ending Page	9
Page Count	9
File Format	PDF
ISSN	03068919
Journal	Optical and Quantum Electronics
Volume Number	48
Issue Number	2
e-ISSN	1572817X
Language	English
Publisher	Springer US
Publisher Date	2016-01-22
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Quantum dot Semiconductor Gas source molecular beam epitaxy Quantum dot laser Optics, Optoelectronics, Plasmonics and Optical Devices Electrical Engineering Characterization and Evaluation of Materials Computer Communication Networks
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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