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| Content Provider | Springer Nature Link |
|---|---|
| Author | Kivisaari, Pyry Sadi, Toufik Oksanen, Jani Tulkki, Jukka |
| Copyright Year | 2016 |
| Abstract | Hot carrier effects have been observed in recent measurements of III–Nitride (III–N) light-emitting diodes. In this paper we carry out bipolar Monte Carlo simulations for electrons and holes in a typical III–N multi-quantum well (MQW) LED. According to our simulations, significant non-quasiequilibrium carrier distributions exist in the barrier layers of the structure. This is observed as average carrier energies much larger than the $$1.5k_BT$$ corresponding to quasi-equilibrium. Due to the small potential drop over the MQW being modest, the non-quasiequilibrium carriers can be predominantly ascribed to nnp and npp Auger processes taking place in the QWs. Further investigations are needed to determine the effects of hot carriers on the macroscopic device characteristics of real devices. |
| Starting Page | 1 |
| Ending Page | 6 |
| Page Count | 6 |
| File Format | |
| ISSN | 03068919 |
| Journal | Optical and Quantum Electronics |
| Volume Number | 48 |
| Issue Number | 2 |
| e-ISSN | 1572817X |
| Language | English |
| Publisher | Springer US |
| Publisher Date | 2016-01-30 |
| Publisher Place | New York |
| Access Restriction | One Nation One Subscription (ONOS) |
| Subject Keyword | III–Nitride LEDs Monte Carlo simulations Hot carriers Non-equilibrium hole distribution Optics, Optoelectronics, Plasmonics and Optical Devices Electrical Engineering Characterization and Evaluation of Materials Computer Communication Networks |
| Content Type | Text |
| Resource Type | Article |
| Subject | Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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