NDLI: Numerical study of the advantages of ultraviolet light-emitting diodes with a single step quantum well as the electron blocking layer

Content Provider	Springer Nature Link
Author	Tian, W. Feng, Z. H. Liu, B. Xiong, H. Zhang, J. B. Dai, J. N. Cai, S. J. Chen, C. Q.
Copyright Year	2012
Abstract	The advantages of ultraviolet light-emitting diodes with a single step quantum well used as electron blocking layer (EBL) are studied numerically. The energy band diagrams, hole concentrations, electrostatic field near the EBL, current–voltage curve and internal quantum efficiency (IQE) are investigated by using the Crosslight simulation programs. The simulation results show that the structure with a single step quantum well has better performance over the conventional one, which can be attributed to the mitigated band bending near the EBL due to the change of electrostatic field by using a step well. Therefore, the efficiency of hole injection is improved, with which both the IQE and the total lighting power are increased.
Starting Page	381
Ending Page	387
Page Count	7
File Format	PDF
ISSN	03068919
Journal	Optical and Quantum Electronics
Volume Number	45
Issue Number	5
e-ISSN	1572817X
Language	English
Publisher	Springer US
Publisher Date	2012-11-28
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Step quantum well Ultraviolet light-emitting diodes (UV-LEDs) Band bending Polarization Optics, Optoelectronics, Plasmonics and Optical Devices Electrical Engineering Characterization and Evaluation of Materials Computer Communication Networks
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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