NDLI: Simulation of InGaN/GaN multiple quantum well light-emitting diodes with quantum dot model for electrical and optical effects

Content Provider	Springer Nature Link
Author	Xia, C. S. Hu, W. D. Wang, C. Li, Z. F. Chen, X. S. Lu, W. Li, Z. M. Simon Li, Z. Q.
Copyright Year	2007
Abstract	We report a 2D simulation of electrical and optical characteristics of green color InGaN/GaN multiple quantum well light-emitting diodes by APSYS software with a dot-in-well model. The In-rich quantum dot-like structure in InGaN/GaN multiple quantum wells has been considered in the LED experimental data analysis. Simulation results based on the quantum dot model are in better agreement with the experimental data than those based on the purely quantum well model, indicating that the quantum dot spontaneous emission and the non-equilibrium quantum transport play important roles in the InGaN/GaN multiple quantum well light-emitting diodes.
Starting Page	1077
Ending Page	1089
Page Count	13
File Format	PDF
ISSN	03068919
Journal	Optical and Quantum Electronics
Volume Number	38
Issue Number	12-14
e-ISSN	1572817X
Language	English
Publisher	Kluwer Academic Publishers-Plenum Publishers
Publisher Date	2007-01-05
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	InGaN/GaN in-rich quantum dot light-emitting diode (LED) simulation quantum dot model Computer Communication Networks Characterization and Evaluation of Materials Electronic and Computer Engineering Applied Optics, Optoelectronics, Optical Devices
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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