NDLI: Orange–Red Light-Emitting Diodes Based on a Prestrained InGaN

Content Provider	IEEE Xplore Digital Library
Author	Horng-Shyang Chen Chih-Feng Lu Dong-Ming Yeh Chi-Feng Huang Jian-Jang Huang Chih-Chung Yang
Copyright Year	1989
Abstract	The implementations of an orange and a red light-emitting diode (LED), which are fabricated with a prestrained InGaN-GaN quantum-well (QW) epitaxy structure, are demonstrated. The prestrain condition is created by growing a low-indium QW before the growth of five high-indium QWs. Without the prestrain condition, the five high-indium QWs of the same growth condition lead to green electroluminescence emission. With the prestrained growth, indium incorporation in the QWs grown after the low-indium one becomes higher and hence the orange-red LEDs can be fabricated for elongating the emission wavelength by more than 100 nm. Although the crystal quality and electrical properties of the orange-red LEDs may need to be improved, our results have shown the important effect of prestrained growth for elongating the LED wavelength
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	2269
Ending Page	2271
Page Count	3
File Size	97132
File Format	PDF
ISSN	10411135
Volume Number	18
Issue Number	21
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Light emitting diodes Quantum wells Epitaxial growth Indium Gallium nitride Fabrication Lattices Capacitive sensors Temperature Electroluminescence white-light light-emitting diode (LED) Orange–red emission prestrained InGaN–GaN quantum well (QW)
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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