NDLI: Realistic Hodgkin–Huxley Axons Using Stochastic Behavior of Memristors

Content Provider	Springer Nature Link
Author	Feali, Mohammad Saeed Ahmadi, Arash
Copyright Year	2016
Abstract	Ion-channel variability has critical effect on the spike initiation and propagation in nervous system. Noise can play a constructive role leading to increased reliability or regularity of neuronal firing and spike propagation in the nervous system. In this paper we show that memristors can be considered as an electronic analogous of the Hodgkin–Huxley ion channels not only in terms of threshold switching effect but also in terms of stochastic behavior. In other words, memristor can also implement stochastic version of Hodgkin–Huxley equation. Switching effect in memristive devices is thermodynamically driven, which is stochastic in nature. We show that if the intrinsic stochastic behavior of memristor is taken into account, memristor based neuristor can also implement stochastic version of Hodgkin–Huxley axon model in generation of action potential. Ion channel variability in neurons can be modeled by intrinsic stochastic behavior of memristor. We incorporate noise in the memristor model by adding white Gaussian noise to the deterministic part of dynamical state evolution function of the memristor. We study the reliability of spike timing for spike train generated by memristor based neuristor in which the noise included memristor model is used. Also, the reliability of spike propagation along thin axons is discussed. A series connection of neuristors can be used as an axon in which neuristor acts as a node of Ranvier on an axon. Probabilistic nature of spike propagation on thin axons can be modeled using neuristor in which the variability nature of memristor is included.
Starting Page	1
Ending Page	14
Page Count	14
File Format	PDF
ISSN	13704621
Journal	Neural Processing Letters
Volume Number	45
Issue Number	1
e-ISSN	1573773X
Language	English
Publisher	Springer US
Publisher Date	2016-01-12
Publisher Place	New York
Access Restriction	Subscribed
Subject Keyword	Memristor Stochastic switching Stochastic neuron Hodgkin–Huxley ion channel Action potential Reliability of spike timing Artificial Intelligence (incl. Robotics) Complex Systems Computational Intelligence
Content Type	Text
Resource Type	Article
Subject	Neuroscience Artificial Intelligence Computer Networks and Communications Software

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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