NDLI: Spin Dynamics in Narrow-Gap Semiconductor Epitaxial Layers

Content Provider	Springer Nature Link
Author	Litvinenko, K. L. Nikzad, L. Allam, J. Murdin, B. N. Pidgeon, C. R. Harris, J. J. Cohen, L. F.
Copyright Year	2007
Abstract	We report on investigation of the spin dynamics in InAs and InSb films grown on GaAs at a temperature range from 77 K to 290 K. For both materials, the large lattice mismatch with the GaAs substrate results in the formation of an interface accumulation layer with a large defect concentration, which strongly affects the spin relaxation in these areas. Moreover, the native surface defect in the InAs films resulted in an additional charge accumulation layer with high conductivity, but very short spin lifetime. In contrast, in InSb layers, the surface states introduce a depletion region. We have correlated the spin relaxation with a multi-layer analysis of the transport properties, and find that in a 1 μm thick InAs film, approximately 70% of the total current flows through the interface and surface accumulation layers, which have sub-picosecond lifetimes, whereas in InSb films of the same thickness, the semiconducting layer carries more than 90% of the total current, and the spin lifetime in the accumulation layer is only slightly less than that of the central semiconducting layer. We suggest that InSb could be a more attractive candidate for spintronic applications than InAs.
Starting Page	461
Ending Page	465
Page Count	5
File Format	PDF
ISSN	15571939
Journal	Journal of Superconductivity and Novel Magnetism
Volume Number	20
Issue Number	6
e-ISSN	15571947
Language	English
Publisher	Springer US
Publisher Date	2007-08-11
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Spin dynamics Transport InAs InSb Spintronics Characterization and Evaluation of Materials Condensed Matter Magnetism, Magnetic Materials Superconductivity, Superfluidity, Quantum Fluids
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Condensed Matter Physics

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