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  1. Journal of Superconductivity and Novel Magnetism
  2. Journal of Superconductivity and Novel Magnetism : Volume 20
  3. Journal of Superconductivity and Novel Magnetism : Volume 20, Issue 6, August 2007
  4. Domain Wall Dynamics in Annealed GaMnAs Epilayers
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Journal of Superconductivity and Novel Magnetism : Volume 30
Journal of Superconductivity and Novel Magnetism : Volume 29
Journal of Superconductivity and Novel Magnetism : Volume 28
Journal of Superconductivity and Novel Magnetism : Volume 27
Journal of Superconductivity and Novel Magnetism : Volume 26
Journal of Superconductivity and Novel Magnetism : Volume 25
Journal of Superconductivity and Novel Magnetism : Volume 24
Journal of Superconductivity and Novel Magnetism : Volume 23
Journal of Superconductivity and Novel Magnetism : Volume 22
Journal of Superconductivity and Novel Magnetism : Volume 21
Journal of Superconductivity and Novel Magnetism : Volume 20
Journal of Superconductivity and Novel Magnetism : Volume 20, Issue 7-8, November 2007
Journal of Superconductivity and Novel Magnetism : Volume 20, Issue 6, August 2007
Preface ( Journal of Superconductivity and Novel Magnetism , Volume 20 , Issue 6 )
Ferromagnetic Resonance and Hall Effect Characterization of GaMnSb Layers
Electrical Spin Injection in Perpendicular Magnetized FePt/MgO/GaAs Heterostructures at Room Temperature
Channel Thickness Dependence of the Magnetic Properties in (Ga,Mn)As FET Structures
Electrical Manipulation of Spin Injection into a Single InAs Quantum Dots
Properties of Heavily Mn-doped GaMnAs with Curie Temperature of 172.5 K
The Non-Metal-to-Metal and Vice-Versa Transitions in a GaMnAs Layer
High Gd Concentration GaGdN Grown at Low Temperatures
The Influence of Device Geometry on Many-Body Effects in Quantum Point Contacts: Signatures of the 0.7 Anomaly, Exchange and Kondo
Pulse-Width Dependence in Current-Driven Magnetization Reversal Using GaMnAs-Based Double-Barrier Magnetic Tunnel Junction
Detailed Measurements of Nuclear Spin Polarizations in a Single InAlAs Quantum Dot Through Overhauser Shift of Photoluminescence
Domain Wall Dynamics in Annealed GaMnAs Epilayers
Comparison of the Mid-Infrared Magneto-Optical Response of Ga$_{1−x }$Mn$_{ x }$As Films Grown by Molecular Beam Epitaxy and Ion Implantation and Pulsed Laser Melting
Spin Dynamics in Narrow-Gap Semiconductor Epitaxial Layers
Soft X-ray Magnetic Circular Dichroism and Photoemission Studies of II–VI Diluted Ferromagnetic Semiconductor Zn$_{1−x }$Cr$_{ x }$Te
Ab-initio Calculation of Electronic and Magnetic Properties of Mn$_{1−x }$Cr$_{ x }$Te
Journal of Superconductivity and Novel Magnetism : Volume 20, Issue 5, July 2007
Journal of Superconductivity and Novel Magnetism : Volume 20, Issue 4, May 2007
Journal of Superconductivity and Novel Magnetism : Volume 20, Issue 3, April 2007
Journal of Superconductivity and Novel Magnetism : Volume 20, Issue 2, February 2007
Journal of Superconductivity and Novel Magnetism : Volume 20, Issue 1, January 2007
Journal of Superconductivity and Novel Magnetism : Volume 19
Journal of Superconductivity and Novel Magnetism : Volume 18
Journal of Superconductivity and Novel Magnetism : Volume 17
Journal of Superconductivity and Novel Magnetism : Volume 16
Journal of Superconductivity and Novel Magnetism : Volume 15
Journal of Superconductivity and Novel Magnetism : Volume 14
Journal of Superconductivity and Novel Magnetism : Volume 13
Journal of Superconductivity and Novel Magnetism : Volume 12
Journal of Superconductivity and Novel Magnetism : Volume 11
Journal of Superconductivity and Novel Magnetism : Volume 10

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Domain Wall Dynamics in Annealed GaMnAs Epilayers

Content Provider Springer Nature Link
Author Dourlat, A. Jeudy, V. Thevenard, L. Lemaître, A. Gourdon, C.
Copyright Year 2007
Abstract We study magnetic field-driven domain wall motion in a GaMnAs thin film. The velocity is measured as function of the applied field. It varies over 6 orders of magnitude in a field range of 2.5 mT. Two regimes are identified. At low field, the domain wall motion follows a creep regime: it is controlled by defects and the domain wall velocity increases exponentially with the applied field. At higher fields, the domain wall motion follows a depinning regime: pinning defects are less efficient and the wall velocity increases linearly with the field. The highest measured domain wall velocity is 14 m s$^{−1}$.
Starting Page 453
Ending Page 455
Page Count 3
File Format PDF
ISSN 15571939
Journal Journal of Superconductivity and Novel Magnetism
Volume Number 20
Issue Number 6
e-ISSN 15571947
Language English
Publisher Springer US
Publisher Date 2007-08-29
Publisher Place Boston
Access Restriction One Nation One Subscription (ONOS)
Subject Keyword Domain wall GaMnAs Magnetic semiconductor Pinning Characterization and Evaluation of Materials Condensed Matter Magnetism, Magnetic Materials Superconductivity, Superfluidity, Quantum Fluids
Content Type Text
Resource Type Article
Subject Electronic, Optical and Magnetic Materials Condensed Matter Physics
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