NDLI: Optical and structural properties of SiC nanocrystals

Content Provider	Springer Nature Link
Author	Morales Rodriguez, M. Díaz Ca, A. Torchynska, T. V. Palacios Gomez, J. Gomez Gasga, G. Polupan, G. Mynbaeva, M.
Copyright Year	2007
Abstract	This paper presents the results of porous SiC characterizations using photoluminescence, scanning electronic microscopy and X-ray diffraction techniques. It is shown that the intensity of defect-related PL bands (2.13 and 2.54 eV) increases monotonically with PSiC thickness rise from 2.0 up to 12.0 μm. These luminescence centers are assigned to surface defects which appear at the PSiC etching process. Intensity enhancement for exciton-related PL bands (2.84, 3.04 and 3.24 eV ) is attributed to the exciton recombination rate increasing as result of electron-hole confinement realization in big size SiC NCs (6H-PSiC with inclusions of 15R- and 4H-PSiC) and/or quantum confinement exciton recombination in small-size 4H-PSiC NCs.
Starting Page	682
Ending Page	686
Page Count	5
File Format	PDF
ISSN	09574522
Journal	Journal of Materials Science: Materials in Electronics
Volume Number	19
Issue Number	8-9
e-ISSN	1573482X
Language	English
Publisher	Springer US
Publisher Date	2007-09-08
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Characterization and Evaluation of Materials Optical and Electronic Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering

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