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  1. Journal of Materials Science: Materials in Electronics
  2. Journal of Materials Science: Materials in Electronics : Volume 11
  3. Journal of Materials Science: Materials in Electronics : Volume 11, Issue 8, November 2000
  4. Nitride compounds as photonic crystals in the optical region
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Journal of Materials Science: Materials in Electronics : Volume 28
Journal of Materials Science: Materials in Electronics : Volume 27
Journal of Materials Science: Materials in Electronics : Volume 26
Journal of Materials Science: Materials in Electronics : Volume 25
Journal of Materials Science: Materials in Electronics : Volume 24
Journal of Materials Science: Materials in Electronics : Volume 23
Journal of Materials Science: Materials in Electronics : Volume 22
Journal of Materials Science: Materials in Electronics : Volume 21
Journal of Materials Science: Materials in Electronics : Volume 20
Journal of Materials Science: Materials in Electronics : Volume 19
Journal of Materials Science: Materials in Electronics : Volume 18
Journal of Materials Science: Materials in Electronics : Volume 17
Journal of Materials Science: Materials in Electronics : Volume 16
Journal of Materials Science: Materials in Electronics : Volume 15
Journal of Materials Science: Materials in Electronics : Volume 14
Journal of Materials Science: Materials in Electronics : Volume 13
Journal of Materials Science: Materials in Electronics : Volume 12
Journal of Materials Science: Materials in Electronics : Volume 11
Journal of Materials Science: Materials in Electronics : Volume 11, Issue 9, December 2000
Journal of Materials Science: Materials in Electronics : Volume 11, Issue 8, November 2000
Surface morphology and dielectric properties of alkoxy-derived Sr$_{2}$Ta$_{2}$O$_{7}$ and Sr$_{2}$Ta, Nb$_{2}$O$_{7}$ thin films
Electrical properties of bulk silicon dioxide and SiO$_{2}$/Si interface formed by tetraethylorthosilicate (TEOS)-oxygen plasma enhanced chemical vapor deposition
Metallurgical reaction and mechanical strength of electroless Ni-P solder joints for advanced packaging applications
Tailoring the microwave dielectric properties of BaRE$_{2}$Ti$_{4}$O$_{12}$ and BaRE$_{2}$Ti$_{5}$O$_{14}$ ceramics by compositional variations
Effect of tetragonality ratio on photo-induced domain switching in poled (Pb$_{1-x}$La$_{x}$)TiO$_{3}$ ferroelectric ceramics
Thermal cycling test in Sn-Bi and Sn-Bi-Cu solder joints
Microstructure and properties of Co$_{2}$Z hexaferrite prepared by gel self-propagating method
Nitride compounds as photonic crystals in the optical region
XPS-investigation of proton exchanged waveguides in LiNbO$_{3}$
Synthesis of Ba$_{6-3x}$Nd$_{8+2x}$Ti$_{18}$O$_{54}$ ceramic powders via citric acid precursor
Analysis of the dielectric characteristics for polycrystalline Ba$_{0.65}$Sr$_{0.35}$TiO$_{3}$ (I)–frequency dependence in the paraelectric state
Analysis of the dielectric characteristics for polycrystalline Ba$_{0.65}$Sr$_{0.35}$TiO$_{3}$ (II) – d.c. field dependence with a modified bias equation
Journal of Materials Science: Materials in Electronics : Volume 11, Issue 7, October 2000
Journal of Materials Science: Materials in Electronics : Volume 11, Issue 6, August 2000
Journal of Materials Science: Materials in Electronics : Volume 11, Issue 5, July 2000
Journal of Materials Science: Materials in Electronics : Volume 11, Issue 4, June 2000
Journal of Materials Science: Materials in Electronics : Volume 11, Issue 3, April 2000
Journal of Materials Science: Materials in Electronics : Volume 11, Issue 2, March 2000
Journal of Materials Science: Materials in Electronics : Volume 11, Issue 1, February 2000
Journal of Materials Science: Materials in Electronics : Volume 10
Journal of Materials Science: Materials in Electronics : Volume 9
Journal of Materials Science: Materials in Electronics : Volume 8

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Nitride compounds as photonic crystals in the optical region

Content Provider Springer Nature Link
Author Moussa, R. Aourag, H. Dufour, J. P. Salomon, L. Certier, M.
Copyright Year 2000
Abstract Usin the transfer matrix method we have studied the optical properties related to the photonic band gap (PBG) concept of the III-nitride family particularly InN and AlN. We have shown that these materials present, for a particular lattice constant and for the same structure, PBGs in all near infrared, optical and ultaviolet regions. In order to give optimal conditions for experiments, the number and the width of these PBGs are studied in more detail. The case of the absorption which occurs for the higher lattice parameter is discussed. This novel class of material opens up many potential applications. For example, PBG crystals can be used to inhibit spontaneous emission in photonic devices, leading to more efficient light emitters such as single-mode-light emitting diodes.
Starting Page 623
Ending Page 627
Page Count 5
File Format PDF
ISSN 09574522
Journal Journal of Materials Science: Materials in Electronics
Volume Number 11
Issue Number 8
e-ISSN 1573482X
Language English
Publisher Kluwer Academic Publishers
Publisher Date 2000-01-01
Publisher Place Boston
Access Restriction One Nation One Subscription (ONOS)
Subject Keyword Optical and Electronic Materials Characterization and Evaluation Materials
Content Type Text
Resource Type Article
Subject Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering
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