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| Content Provider | Springer Nature Link |
|---|---|
| Author | Maurya, Savita |
| Copyright Year | 2016 |
| Abstract | Hafnium dioxide was proposed by the researchers as one of the dielectric materials that could be used as dielectric layer in the fabrication of capacitor in MOS-based devices and capacitive RF MEMS switches. In the current work, HfO$_{2}$ dielectric layer has been fabricated using ALD technique and the fabricated layers have been investigated under Co-60 gamma irradiation doses up to 1500 krad (SiO$_{2}$). Crystal structures and the phase of the HfO$_{2}$ thin films were studied before and after irradiation using GI-X-ray diffraction, elemental composition was investigated by energy-dispersive X-ray spectroscopy. Capacitance–Voltage (C–V) and Conductance–Voltage (G–V) measurements were measured before and after irradiation at 1 MHz AC frequency. The density of the interface states (D$_{it}$) was calculated from measured C–V and G–V characteristics. Dependency of flat band voltage on irradiated dose was obtained from the C–V measurements. Slight decrease in series resistance (R$_{S}$) was observed with increase in irradiation dose, which is crucial for the conductance of the device characteristics. D$_{it}$ features improved for higher irradiation doses but still in the order of 10$^{11}$ eV/cm$^{2}$. Calculated values of D$_{it}$ were not found to be high enough for Fermi level pinning and so it’s not corrupting the device operation over the given dose range. The effect of irradiation on HfO$_{2}$ thin films and MOS system were determined from analysis of measured XRD spectra, C–V and G–V curves. |
| Starting Page | 12796 |
| Ending Page | 12802 |
| Page Count | 7 |
| File Format | |
| ISSN | 09574522 |
| Journal | Journal of Materials Science: Materials in Electronics |
| Volume Number | 27 |
| Issue Number | 12 |
| e-ISSN | 1573482X |
| Language | English |
| Publisher | Springer US |
| Publisher Date | 2016-07-25 |
| Publisher Place | New York |
| Access Restriction | One Nation One Subscription (ONOS) |
| Subject Keyword | Optical and Electronic Materials Characterization and Evaluation of Materials |
| Content Type | Text |
| Resource Type | Article |
| Subject | Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering |
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