NDLI: Effects of Al content on physical properties of ZnS thin films prepared by chemical bath deposition

Content Provider	Springer Nature Link
Author	Jrad, Abdelhak Nasr, Tarek Ben Turki Kamoun, Najoua
Copyright Year	2015
Abstract	In this work we report the effect of aluminum on the physical properties of Al-doped ZnS thin films. Our samples have been synthesized by chemical bath deposition from aqueous solutions (Sahraei and Darafarin in Spectrochim Acta A Mol Biomol Spectrosc 149:941–948, 2015). X-ray diffraction analysis revealed that the films are monocrystalline and showed (111) preferred orientation for all the doping concentration. Doping ZnS thin films shows significant changes in the transmittance characteristics in the visible range. The refractive index dispersion and extinction coefficients are adequately described by the Wemple–DiDomenico model. The value of oscillator energy E $_{0}$, dispersion energy E $_{ d }$, the high-frequency dielectric constant ɛ $_{∞}$ and ratio of the carrier concentration to the effective mass N/m* were estimated according to the models of Wemple–DiDomenico and Spitzer–Fan. Photoluminescence behavior of Al-doped ZnS thin films was also studied.
Starting Page	8854
Ending Page	8862
Page Count	9
File Format	PDF
ISSN	09574522
Journal	Journal of Materials Science: Materials in Electronics
Volume Number	26
Issue Number	11
e-ISSN	1573482X
Language	English
Publisher	Springer US
Publisher Date	2015-08-07
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Optical and Electronic Materials Characterization and Evaluation of Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering

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