NDLI: Study of the monolithic integration of sub-bandgap detection, signal amplification and optical attenuation on a silicon photonic chip

Content Provider	Springer Nature Link
Author	Jessop, P. E. Rowe, L. K. McFaul, S. M. Knights, A. P. Tarr, N. G. Tam, A.
Copyright Year	2008
Abstract	We report the development of a silicon integrated circuit that combines conventional electronic circuitry with all-silicon optical waveguides, detectors and modulators. The circuit functions as an optical channel power leveller by amplifying current from a photodetector and feeding that current back to a modulator on the same waveguide. This article describes the use of local oxidation of silicon (LOCOS) for optical waveguide fabrication, the use of deep diffused wells to ensure electrical isolation between the forward biased modulator and detector diodes, and defect-engineering of the photodiodes to give them sufficient responsivity at the operating wavelength of 1.55 μm.
Starting Page	456
Ending Page	459
Page Count	4
File Format	PDF
ISSN	09574522
Journal	Journal of Materials Science: Materials in Electronics
Volume Number	20
Issue Number	1
e-ISSN	1573482X
Language	English
Publisher	Springer US
Publisher Date	2008-03-11
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Characterization and Evaluation of Materials Optical and Electronic Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering

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Study of the monolithic integration of sub-bandgap detection, signal amplification and optical attenuation on a silicon photonic chip