NDLI: Effect of rapid thermal annealing treatment on the field-emission characteristics of nanocrystalline diamonds grown on various metal/silicon substrates

Content Provider	Springer Nature Link
Author	Yeh, Chun Shin Wang, Dau Chung Huang, Bohr Ran Lee, Shih Fong Hsu, Jung Fu Mao, Jen Yuan
Copyright Year	2009
Abstract	In this study, nanocrystalline diamond (NCD) films were deposited on various metal/silicon substrates using a microwave plasma chemical vapor deposition system. Metal layers used are chromium, titanium, aluminum and were used as the electron source for field emitters. These NCD/metal/silicon structures were subsequently annealed at 500 °C in a rapid thermal annealing (RTA) furnace. After RTA treatment, the surface of NCD films becomes flat and the grain boundaries can no longer be clearly seen. The intensity of graphitic peak is substantially decreased and the sp$^{3}$ content of NCD films is increased. The chemical composition of NCD film remains unchanged after RTA treatment, but the sp$^{3}$/sp$^{2}$ ratio in C 1s has been increased. It is found that the field-emission characteristics of diamond emitter not only can be effectively controlled by the metal used in the metal/NCD/Si structure, but also can be further enhanced by the improved microstructure of the NCD film obtained after RTA treatment.
Starting Page	385
Ending Page	392
Page Count	8
File Format	PDF
ISSN	09574522
Journal	Journal of Materials Science: Materials in Electronics
Volume Number	21
Issue Number	4
e-ISSN	1573482X
Language	English
Publisher	Springer US
Publisher Date	2009-06-21
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Characterization and Evaluation of Materials Optical and Electronic Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering

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