NDLI: Preparation of CuInSe$_{2}$ thin films by selenization of co-sputtered Cu-In precursors using rapid thermal processing

Content Provider	Springer Nature Link
Author	Xie, Hai Bing Liu, Wei Feng Li, Xin Yi Yan, Fei Jiang, Guo Shun Zhu, Chang Fei
Copyright Year	2012
Abstract	CuInSe$_{2}$ thin films have been synthesized by selenization of co-sputtered Cu-In precursors using rapid thermal processing (RTP). Heat treatments from 400 to 450 °C for periods between 1 min and 10 min were carried out on (Cu-In)/Se precursors. Phase evolution as function of reaction temperature and holding time was analyzed according to XRD and SEM results. Severe Se loss during RTP was proved in our experiments and has been reported by many other researchers. To solve the problem, a new effective way of reducing Se loss was presented, which is based on low temperature heat treatment at 250 °C before high temperature annealing. Nearly single-phase CuInSe$_{2}$ thin films have been achieved by annealing precursors at 250 °C for 5 min then 450 °C for 1 min. Se loss can be significantly reduced via low temperature heat treatment by the fact that under 250 °C, Se is evaporated mildly and largely consumed as Cu-Se and In-Se binary selenides.
Starting Page	475
Ending Page	482
Page Count	8
File Format	PDF
ISSN	09574522
Journal	Journal of Materials Science: Materials in Electronics
Volume Number	24
Issue Number	2
e-ISSN	1573482X
Language	English
Publisher	Springer US
Publisher Date	2012-07-07
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Optical and Electronic Materials Characterization and Evaluation of Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering

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