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  1. Journal of Materials Science: Materials in Electronics
  2. Journal of Materials Science: Materials in Electronics : Volume 22
  3. Journal of Materials Science: Materials in Electronics : Volume 22, Issue 2, February 2011
  4. Interfacial reaction between Au and Sn films electroplated for LED bumps
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Journal of Materials Science: Materials in Electronics : Volume 28
Journal of Materials Science: Materials in Electronics : Volume 27
Journal of Materials Science: Materials in Electronics : Volume 26
Journal of Materials Science: Materials in Electronics : Volume 25
Journal of Materials Science: Materials in Electronics : Volume 24
Journal of Materials Science: Materials in Electronics : Volume 23
Journal of Materials Science: Materials in Electronics : Volume 22
Journal of Materials Science: Materials in Electronics : Volume 22, Issue 12, December 2011
Journal of Materials Science: Materials in Electronics : Volume 22, Issue 11, November 2011
Journal of Materials Science: Materials in Electronics : Volume 22, Issue 10, October 2011
Journal of Materials Science: Materials in Electronics : Volume 22, Issue 9, September 2011
Journal of Materials Science: Materials in Electronics : Volume 22, Issue 8, August 2011
Journal of Materials Science: Materials in Electronics : Volume 22, Issue 7, July 2011
Journal of Materials Science: Materials in Electronics : Volume 22, Issue 6, June 2011
Journal of Materials Science: Materials in Electronics : Volume 22, Issue 5, May 2011
Journal of Materials Science: Materials in Electronics : Volume 22, Issue 4, April 2011
Journal of Materials Science: Materials in Electronics : Volume 22, Issue 3, March 2011
Journal of Materials Science: Materials in Electronics : Volume 22, Issue 2, February 2011
Bisphenol A based pyrazoloquinoline dimers as dopants for electroluminescent applications
Influence of CuO and B$_{2}$O$_{3}$ on sintering and dielectric properties of tungsten bronze type microwave ceramics: a case study in Ba$_{4}$Nd$_{9.3}$Ti$_{18}$O$_{54}$
Electrical and crystallographic properties of nanocrystalline CdSe$_{0.5}$S$_{0.5}$ composite thin films deposited by dip method
Preparation of La$_{2}$NiMnO$_{6}$ thin films on Pt/TiO$_{2}$/SiO$_{2}$/Si substrates by pulsed laser deposition
Photoconductivity of a bundle of Bis(8-hydroxyquinoline) cadmium nanoribbons
Phase evolution and magnetic properties study of Fe/Cobalt ferrite nanocomposites
Effect of V substitution on microstructure and ferroelectric properties of Bi$_{3.6}$Ho$_{0.4}$Ti$_{3}$O$_{12}$ thin films prepared by sol–gel method
Chemical synthesis and low temperature electrical transport in polypyrrole doped with sodium bis(2-ethylhexyl) sulfosuccinate
Oxidation of sputtered Zr thin film on Si substrate
Structural and electrochemical properties of Eu-doped LiCoO$_{2}$
Analysis of critical doping level of sprayed antimony doped tin oxide films
The characteristics of (Pb,La)(Zr,Sn,Ti)O$_{3}$ ceramics synthesized by coprecipitation method compared to conventional mixed oxide method
Structural characteristics and dielectric properties of neodymium doped barium titanate
Visible photoluminescence of hydrothermal synthesized Sn$_{1−x }$Ni$_{x}$O$_{2}$ nanostructures
The blue cathodoluminescence and photoluminescence of porous silicon nanoribbons
Nanoimprint glass-like carbon molds fabricated with ECR oxygen ion beams using polysiloxane oxide mask
Sintering and electrical properties of Ce$_{0.8}$Sm$_{0.2}$O$_{1.9}$ film prepared by spray pyrolysis and tape casting
Interfacial reaction between Au and Sn films electroplated for LED bumps
Synthesis of cerium oxide nanoparticles by microwave technique using propylene glycol as a stabilizing agent
The influences of technological conditions and Au cluster islands on morphology of Ga$_{2}$O$_{3}$ nanowires grown by VLS method on GaAs substrate
Journal of Materials Science: Materials in Electronics : Volume 22, Issue 1, January 2011
Journal of Materials Science: Materials in Electronics : Volume 21
Journal of Materials Science: Materials in Electronics : Volume 20
Journal of Materials Science: Materials in Electronics : Volume 19
Journal of Materials Science: Materials in Electronics : Volume 18
Journal of Materials Science: Materials in Electronics : Volume 17
Journal of Materials Science: Materials in Electronics : Volume 16
Journal of Materials Science: Materials in Electronics : Volume 15
Journal of Materials Science: Materials in Electronics : Volume 14
Journal of Materials Science: Materials in Electronics : Volume 13
Journal of Materials Science: Materials in Electronics : Volume 12
Journal of Materials Science: Materials in Electronics : Volume 11
Journal of Materials Science: Materials in Electronics : Volume 10
Journal of Materials Science: Materials in Electronics : Volume 9
Journal of Materials Science: Materials in Electronics : Volume 8

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Interfacial reaction between Au and Sn films electroplated for LED bumps

Content Provider Springer Nature Link
Author Huang, M. L. Liu, Y. Gao, J. X.
Copyright Year 2010
Abstract Au-20 wt% Sn eutectic solder is used as bumps in flip chip package of power LED (Light Emitting Diode) due to its excellent properties. The Au/Sn dual-layer films were fabricated on Si wafer by pulse electroplating of Au and Sn sequentially, and the solid–solid interfacial reaction during aging and the eutectic reaction during reflow soldering were investigated in the present work. After storage at room temperature for 1 week, three phases of AuSn, AuSn$_{2}$ and AuSn$_{4}$ were sequentially formed at the Au/Sn (10 μm/10 μm) interface, and the thickness of this reaction region was about 5 μm. Firstly, AuSn$_{4}$ was formed at the Au/Sn interface, and then AuSn and AuSn$_{2}$ were formed at the Au/AuSn$_{4}$ interface. After aging at 150 °C for 5 and 10 h, a similar layered structure of AuSn/AuSn$_{2}$/AuSn$_{4}$ was also observed. Due to the faster diffusion of Au to Sn layer, all the Sn elements were consumed after aging at 150 °C for 15 h and AuSn$_{4}$ layer gradually transformed into AuSn and AuSn$_{2}$ layers. For the specimen of Au/Sn (9 μm/6 μm) films on Si chip, a bamboo-shoot-like microstructure of Au$_{5}$Sn/AuSn/AuSn$_{2}$ was formed in the reaction region after reflowed at 280 °C for 10 s; while a typical two-phase (Au$_{5}$Sn and AuSn) eutectic microstructure was formed after reflowed at 280 °C for 60 s.
Starting Page 193
Ending Page 199
Page Count 7
File Format PDF
ISSN 09574522
Journal Journal of Materials Science: Materials in Electronics
Volume Number 22
Issue Number 2
e-ISSN 1573482X
Language English
Publisher Springer US
Publisher Date 2010-05-12
Publisher Place Boston
Access Restriction One Nation One Subscription (ONOS)
Subject Keyword Characterization and Evaluation of Materials Optical and Electronic Materials
Content Type Text
Resource Type Article
Subject Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering
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