NDLI: Electrical studies of semiconductor

Content Provider	Springer Nature Link
Author	Jamal Deen, M. Iñiguez, Benjamin Mariv, Ognian Lime, François
Copyright Year	2006
Abstract	In this paper, a review of the physical properties and characterization techniques of semiconductor–dielectric interfaces, and also of the dielectrics is presented. A good interface between the semiconductor and the dielectric with low defect density as well as a high-quality dielectric are critical for the performance characteristics of metal-oxide-semiconductor (MOS) transistors. While this paper is focused on silicon–silicon dioxide systems, other interfaces with novel gate dielectrics are also discussed. The main experimental techniques that are used to obtain the density of interface states and related parameters such as capture cross sections are described, and their advantages and disadvantages are discussed. The adaptation of these techniques to interfaces with novel dielectrics is also discussed. Finally, a discussion of some experimental techniques used to study the physical properties of dielectrics is presented.
Starting Page	663
Ending Page	683
Page Count	21
File Format	PDF
ISSN	09574522
Journal	Journal of Materials Science: Materials in Electronics
Volume Number	17
Issue Number	9
e-ISSN	1573482X
Language	English
Publisher	Kluwer Academic Publishers
Publisher Date	2006-01-01
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Optical and Electronic Materials Characterization and Evaluation Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering

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