NDLI: 3D Monte Carlo simulation of FinFET and FDSOI devices with accurate quantum correction

Content Provider	Springer Nature Link
Author	Bufler, F. M. Smith, L.
Copyright Year	2013
Abstract	The performance of FinFET and FDSOI devices is compared by 3D Monte Carlo simulation using an enhanced quantum correction scheme. This scheme has two new features: (i) the quantum correction is extracted from a 2D cross-section of the 3D device and (ii) in addition to using a modified oxide permittivity and a modified work function in subthreshold, the work function is ramped above threshold to a different value in the on-state. This approach improves the accuracy of the quantum-correction for multi-gate devices and is shown to accurately reproduce 3D density-gradient simulation also at short channel lengths. 15 nm FDSOI device performance with thin box and back-gate bias is found to be competitive: compared to a FinFET with (110)/〈110〉 sidewall/channel orientation, the on-current for N-type devices is 25 % higher and the off-current is only increased by a factor of 2.5.
Starting Page	651
Ending Page	657
Page Count	7
File Format	PDF
ISSN	15698025
Journal	Journal of Computational Electronics
Volume Number	12
Issue Number	4
e-ISSN	15728137
Language	English
Publisher	Springer US
Publisher Date	2013-11-07
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	3D Monte Carlo Quantum effects Fully-depleted SOI devices FinFET ApplicationMathematics/Computational Methods of Engineering Electrical Engineering Theoretical, Mathematical and Computational Physics Optical and Electronic Materials Mechanical Engineering
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering Modeling and Simulation

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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