NDLI: Design and characterization of the negative differential resistance circuits using the CMOS and BiCMOS process

Content Provider	Springer Nature Link
Author	Gan, Kwang Jow Tsai, Cher Shiung Liang, Dong Shong
Copyright Year	2009
Abstract	We investigate four novel negative-differential-resistance (NDR) circuits using the combination of the standard Si-based n-channel metal-oxide-semiconductor field-effect-transistor (NMOS) and SiGe-based heterojunction bipolar transistor (HBT). By suitably designing the parameters, we can obtain the Λ- or N-type current–voltage (I–V) curve. Especially, the peak current of the combined I–V curve could be easy adjusted by the external voltage. In application, we utilize the NDR circuit to design an inverter circuit based on the monostable–bistable transition logic element. The fabrication of these NDR circuits and applications could be completely implemented by the simple and standard Si-based CMOS or SiGe-based BiCMOS process without using the complex and expensive process such as metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).
Starting Page	63
Ending Page	68
Page Count	6
File Format	PDF
ISSN	09251030
Journal	Analog Integrated Circuits and Signal Processing
Volume Number	62
Issue Number	1
e-ISSN	15731979
Language	English
Publisher	Springer US
Publisher Date	2009-06-12
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Negative-differential-resistance Monostable–bistable transition logic element CMOS BiCMOS Signal, Image and Speech Processing Electrical Engineering Circuits and Systems
Content Type	Text
Resource Type	Article
Subject	Surfaces, Coatings and Films Signal Processing Hardware and Architecture

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