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| Content Provider | Springer Nature Link |
|---|---|
| Author | Ju, Y. Kobayashi, T. Soyama, H. |
| Copyright Year | 2007 |
| Abstract | In order to develop a new structural microwave probe, we studied the fabrication of an AFM probe on a GaAs wafer. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe where a tip 7 μm high with a 2.0 aspect ratio was formed and the dimensions of the cantilever were 250 × 30 × 15 μm. The open structure of the waveguide at the tip of the probe was obtained by FIB fabrication. An AFM image and profile analysis for a standard sample, obtained by the fabricated GaAs microwave probe and a commercial Si AFM probe, indicate that the fabricated probe has a similar capability for measurement of material topography as compared to the commercial probe. |
| Starting Page | 1021 |
| Ending Page | 1025 |
| Page Count | 5 |
| File Format | |
| ISSN | 09467076 |
| Journal | Microsystem Technologies |
| Volume Number | 14 |
| Issue Number | 7 |
| e-ISSN | 14321858 |
| Language | English |
| Publisher | Springer-Verlag |
| Publisher Date | 2007-12-11 |
| Publisher Place | Berlin, Heidelberg |
| Access Restriction | One Nation One Subscription (ONOS) |
| Subject Keyword | Operating Procedures, Materials Treatment Mechanical Engineering Nanotechnology Electronics and Microelectronics, Instrumentation |
| Content Type | Text |
| Resource Type | Article |
| Subject | Nanoscience and Nanotechnology Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering Hardware and Architecture |
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