NDLI: Dislocation density investigation on MOCVD-grown GaN epitaxial layers using wet and dry defect selective etching

Content Provider	Springer Nature Link
Author	Pandey, Akhilesh Yadav, Brajesh S. Rao, D. V. Sridhara Kaur, Davinder Kapoor, Ashok Kumar
Copyright Year	2016
Abstract	Results on the investigations of the dislocation etch pits in the GaN layers grown on sapphire substrate by metal organic chemical vapor deposition are revealed by wet chemical etching, and dry etching techniques are reported. The wet etching was carried out in molten KOH, and inductively coupled plasma (ICP) was used for dry etching. We show that ICP using dry etching and wet chemical etching using KOH solution under optimal conditions give values of dislocation density comparable to the one obtained from the high-resolution X-ray diffraction, atomic force microscopy and transmission electron microscopy investigations. Investigated threading dislocation density is in the order of ~109/cm2 using different techniques.
Starting Page	1
Ending Page	10
Page Count	10
File Format	PDF
ISSN	09478396
Journal	Applied Physics A
Volume Number	122
Issue Number	6
e-ISSN	14320630
Language	English
Publisher	Springer Berlin Heidelberg
Publisher Date	2016-05-24
Publisher Place	Berlin, Heidelberg
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Condensed Matter Physics Optical and Electronic Materials Nanotechnology Characterization and Evaluation of Materials Surfaces and Interfaces, Thin Films Operating Procedures, Materials Treatment
Content Type	Text
Resource Type	Article
Subject	Chemistry Materials Science

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Dislocation density investigation on MOCVD-grown GaN epitaxial layers using wet and dry defect selective etching