NDLI: Selective wet etching of Ge2Sb2Te5 phase-change thin films in thermal lithography with tetramethylammonium

Content Provider	Springer Nature Link
Author	Deng, Changmeng Geng, Yongyou Wu, Yiqun
Copyright Year	2011
Abstract	In this paper, we study Ge2Sb2Te5 phase-change film as a promising inorganic photoresist using organic alkaline: tetramethylammonium hydroxide (TMAH) solution, instead of inorganic alkali or acid as etchant. The basic etching properties are investigated by prior and posterior annealing Ge2Sb2Te5 films. Selectivity is found to be dependent on concentration of TMAH. There is a good selectivity in the 25% TMAH solution, in which the amorphous state is etched away, whereas the crystalline state remains. The etching rate decreases when the concentration of TMAH is diluted; and an opposite selectivity, compared with 25% TMAH solution, is observed in the 0.125% TMAH solution. Selective etching with laser crystallization in different power levels is also studied, and an excellent wet selectivity in the 25% TMAH solution is obtained. The remaining crystalline lines are observed by atomic force microscopy. The surface roughness after etching is at a good level. The selective wet-etching mechanism is also discussed.
Starting Page	1091
Ending Page	1097
Page Count	7
File Format	PDF
ISSN	09478396
Journal	Applied Physics A
Volume Number	104
Issue Number	4
e-ISSN	14320630
Language	English
Publisher	Springer-Verlag
Publisher Date	2011-04-09
Publisher Place	Berlin, Heidelberg
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Characterization and Evaluation of Materials Surfaces and Interfaces, Thin Films Operating Procedures, Materials Treatment Nanotechnology Optical and Electronic Materials Condensed Matter Physics
Content Type	Text
Resource Type	Article
Subject	Chemistry Materials Science

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