NDLI: Surface preparation effect of GaAs(110) substrates on the ZnSe epitaxial layer grown by molecular beam epitaxy

Content Provider	Springer Nature Link
Author	Ko, H. C. Kim, Y. S. Kim, C. O.
Copyright Year	1999
Abstract	The effect of the surface preparation of the GaAs(110) substrate on the ZnSe epitaxial layer grown by molecular beam epitaxy (MBE) was investigated by means of etch-pit density (EPD) measurements, surface morphology observation, and reflection high-energy electron diffraction (RHEED) analysis. The ZnSe epitaxial layer grown on a GaAs(110) surface prepared by cleaving the (001)-oriented wafer in ultrahigh vacuum (UHV) showed about 5×104 cm-2 of EPD. This value is much lower than that observed from both the samples grown on the mechanically polished surface with and without a GaAs buffer layer. Due to the non-stoichiometric surface after thermal evaporation of the surface oxide, three-dimensional growth can easily occur on the mechanically polished GaAs(110) substrate. These results suggest that the stoichiometric and atomically flat substrate surface is essential for the growth of low-defect ZnSe epitaxial layers on the GaAs(110) non-polar surface.
Starting Page	627
Ending Page	629
Page Count	3
File Format	PDF
ISSN	09478396
Journal	Applied Physics A
Volume Number	68
Issue Number	6
e-ISSN	14320630
Language	English
Publisher	Springer-Verlag
Publisher Date	1999-06-01
Publisher Place	Berlin, Heidelberg
Access Restriction	One Nation One Subscription (ONOS)
Content Type	Text
Resource Type	Article
Subject	Chemistry Materials Science

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Surface preparation effect of GaAs(110) substrates on the ZnSe epitaxial layer grown by molecular beam epitaxy