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Electrically driven ultraviolet lasing behavior from phosphorus-doped p-ZnO nanonail array/n-Si heterojunction
| Content Provider | Semantic Scholar |
|---|---|
| Author | Zhang, Jun-Yan Zhang, Qifeng Deng, Tian-Song Wu, Jin-Lei |
| Copyright Year | 2009 |
| Abstract | Electrically driven ultraviolet lasing behavior from p-ZnO:P nanonail array/n-Si heterojunction was demonstrated. Phosphorus-doped ZnO nanonail arrays were grown by chemical vapor deposition method. The constructed heterojunction with indium tin oxide films as the contacted electrodes demonstrated clear rectifying behavior, and the turn-on voltage was about 2.5 V. The p-n junction lowered the excitation threshold effectively and the electrically driven ultraviolet lasing behavior exhibited high monochromaticity: when the applied forward current reached 24 mA, distinct ultraviolet laser emission peaks were obtained at room temperature, and the full width at half maxims were 0.7, 0.9, and 0.5 nm, respectively. The three sharp peaks represented different lasing modes. |
| Starting Page | 211107 |
| Ending Page | 211107 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.3268438 |
| Volume Number | 95 |
| Alternate Webpage(s) | http://chglib.icp.ac.ru/subjex/2012/pdf09/AplPhysLet-2009-95(21)211107.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.3268438 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
