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Electrically Pumped Single-Mode Lasing Emission of Self-Assembled n-ZnO Microcrystalline Film/p-GaN Heterojunction Diode
| Content Provider | Semantic Scholar |
|---|---|
| Author | Guo, Zhen Zhao, Dongxu Liu, YiChun Shen, Dezhen Zhang, Zhengzhong Li, Binghui |
| Copyright Year | 2010 |
| Abstract | The self-assembled ZnO microcrystalline film was synthesized through repeated growth by a low-temperature hydrothermal method using p-GaN wafer as a template. Well-defined peaks with 6-fold symmetry in the XRD ϕ-scan indicated the repeated grown ZnO microcrystal following an orientation relationship of [103]ZnO||[103]GaN. Room temperature photoluminescence (RT PL) spectra indicated that self-assembled ZnO owned a strong ultraviolet (UV) emission accompanied by a weak defects-related emission. The electrically pumped single-mode lasing emission located at 407 nm with a full width at half-maximum (fwhm) of 0.7 nm was observed based on the self-assembled n-ZnO microcrystalline film/p-GaN heterojunction diode. |
| Starting Page | 15499 |
| Ending Page | 15503 |
| Page Count | 5 |
| File Format | PDF HTM / HTML |
| DOI | 10.1021/jp105016b |
| Volume Number | 114 |
| Alternate Webpage(s) | http://ir.ciomp.ac.cn/bitstream/181722/26126/1/Guo-2010-Electrically%20Pumped.pdf |
| Alternate Webpage(s) | https://doi.org/10.1021/jp105016b |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
