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C-Advanced inorganic materials and structures for photovoltaics Electrical study of Si / PS / ZnO : In solar cell structure
| Content Provider | Semantic Scholar |
|---|---|
| Author | Belaida, H. Nouiria, M. Ayadia, Z. Ben Djessasb, K. Mira, López |
| Copyright Year | 2015 |
| Abstract | Indium doped zinc oxide (IZO) thin films have been grown on porous silicon, in order to develop solar cell structure, by rf-sputtering at room temperature using indium (4 at %) doped nanocrystalline powder previously synthesized by the sol-gel method. Such layers are polycrystalline with a hexagonal wurtzite structure with a thickness of about 400 nm and preferential orientation in (002) crystallographic direction. Electrical study under illumination reveals that this type of nanostructure is promising for solar cell application. By comparing Si/PS/IZO and Si/PS/ZnO/IZO structures, we illustrate a satisfactory photovoltaic conversion with these structures. Also we reveal that interposing an undoped ZnO layer leads to a degradation of PV parameters, specially the short-circuit current (Isc) was affected. In fact, Isc decreases from 3 mA to 0.8 mA by adding the undoped ZnO thin layer. The open circuit voltage is less affected. A decay of 30 mV was recorded. C-V analysis gave a carrier density of about 10 cm for both cells. © 2015 The Authors. Published by Elsevier Ltd. Peer-review under responsibility of The European Materials Research Society (E-MRS) |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://core.ac.uk/download/pdf/82585326.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
