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Advanced Inorganic Materials and Concepts for Photovoltaics Structural and optical study of Ge nanocrystals embedded in Si 3 N 4 matrix
| Content Provider | Semantic Scholar |
|---|---|
| Author | Leea, S. Huanga, S. Conibeera, G. Greena, M. A. |
| Copyright Year | 2011 |
| Abstract | Ge nanocrystals were fabricated in Si3N4 matrix by rf (radio frequency) magnetron sputtering, followed by postannealing in a conventional tube furnace filled with N2. Ge content was varied between 30-50vol% in Ge-rich silicon nitride (GRN) layer with variation of annealing temperature between 600-900 oC were applied to study the crystallization properties. The structure of the Ge nanocrystals was studied by Raman spectroscopy, glancing incidence x-ray diffraction (GIXRD) and transmission electron microscope (TEM). The composition and bonding status of Ge nanocrystals was confirmed by x-ray photoelectron spectroscopy (XPS). TEM images, Raman and XRD results show that the crystallization transition is dependent on temperature and Ge content. Crystals in 50vol% annealed at 900 oC were found as partially oxidized with 2at% of oxygen during the annealing process. This was shown by the XPS result. However, absorption measurement did not show evidence of quantum confinement of the Ge crystals. Keywords; Germanium; disk-shaped nanocrystals; GIXRD; Raman; TEM |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://core.ac.uk/download/pdf/82578056.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
