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Thin Film 3 : Gate insulation Film 4 : Gate Electrode 5 : Source Electrode 6 : Drain Electrode
| Content Provider | Semantic Scholar |
|---|---|
| Copyright Year | 2017 |
| Abstract | Disclosed is a natural-Superlattice homologous single-crys tal thin film, which includes a complex oxide which is epitaxially grown on either one of a ZnO epitaxial thin film formed on a single-crystal Substrate, the single-crystal Sub strate after disappearance of the ZnO epitaxial thin film and a ZnO single crystal. The complex oxide is expressed by the formula: MMO (ZnO), wherein M' is at least one selected from the group consisting of Ga, Fe, Sc., In, Lu, Yb. Tm, Er, Ho and Y. M is at least one selected from the group consisting of Mn, Fe, Ga. In and Al, and m is a natural number of 1 or more. A natural-Superlattice homologous single-crystal thin film formed by depositing the complex oxide and subjecting the obtained layered film to a thermal anneal treatment can be used in optimal devices, electronic devices and X-ray optical devices. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://patentimages.storage.googleapis.com/27/a8/43/36b3a97b974b04/US7061014.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |