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Gate Terminal 5 Drain Terminal ZZZZZZZ ZZZZZZZ 3 Gate Insulating Film-SOurce Terminal 2 Amorphous Oxide Channel Layer 1 Glass Substrate or PET Film
| Content Provider | Semantic Scholar |
|---|---|
| Copyright Year | 2017 |
| Abstract | The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 10"/cm, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentra tion less than 10/cm is used in the channel layer 2. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://patentimages.storage.googleapis.com/ec/d7/73/a03836b505587d/US20090280600A1.pdf |
| Alternate Webpage(s) | https://patentimages.storage.googleapis.com/eb/22/e5/ca82128d5d4811/US20070194379A1.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Patent |