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Study of GaN light-emitting diodes fabricated by laser lift-off technique
| Content Provider | Semantic Scholar |
|---|---|
| Author | Chu, Chen-Fu Lai, Fang-I Chu, Jung-Tang Lin, Chia-Feng Kuo, Hao-Chung Wang, S. C. |
| Copyright Year | 2004 |
| Abstract | The fabrication process and performance characteristics of the laser lift-off (LLO) GaN light-emitting diodes (LEDs) were investigated. The LLO-GaN LEDs were fabricated by lifting off the GaN LED wafer structure grown on the original sapphire substrate by a KrF excimer laser at 248 nm wavelength with the laser fluence of 0.6 J/cm2 and transferring it onto a Cu substrate. The LLO-GaN LEDs on Cu show a nearly four-fold increase in the light output power over the regular LLO-LEDs on the sapphire substrate. High operation current up to 400 mA for the LLO-LEDs on Cu was also demonstrated. Based on the emission wavelength shift with the operating current data, the LLO-LEDs on Cu show an estimated improvement of heat dissipation capacities by nearly four times over the light-emitting devices on sapphire substrate. The LLO process should be applicable to other GaN-based LEDs in particular for those high light output power and high operation current devices. |
| Starting Page | 3916 |
| Ending Page | 3922 |
| Page Count | 7 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.1651338 |
| Volume Number | 95 |
| Alternate Webpage(s) | https://ir.nctu.edu.tw/bitstream/11536/26868/1/000220586100007.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.1651338 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
