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InxGa1−xN light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off
| Content Provider | Semantic Scholar |
|---|---|
| Author | Wong, William S. Sands, Timothy D. Cheung, N. W. Kneissl, Michael Bour, David P. Mei, Ping Palo Alto Romano, Linda T. Johnson, Natasha M. |
| Copyright Year | 2000 |
| Abstract | Indium–gallium nitride (InxGa1−xN) single-quantum-well (SQW) light emitting diodes (LEDs), grown by metalorganic chemical vapor deposition on sapphire, were transferred onto Si substrates. The thin-film InxGa1−xN SQW LED structures were first bonded onto a n+-Si substrate using a transient-liquid-phase Pd–In wafer-bonding process followed by a laser lift-off technique to remove the sapphire growth substrate. Individual, 250×250 μm2, LEDs with a backside contact through the n+-Si substrate were then fabricated. The LEDs had a typical turn-on voltage of 2.5 V and a forward current of 100 mA at 5.4 V. The room-temperature emission peak for the InxGa1−xN SQW LEDs was centered at 455 nm with a full width at half maximum of 19 nm. |
| Starting Page | 2822 |
| Ending Page | 2824 |
| Page Count | 3 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.1319505 |
| Volume Number | 77 |
| Alternate Webpage(s) | https://www.researchgate.net/profile/Nathan_Cheung2/publication/234981004_InGaN_light_emitting_diodes_on_Si_substrates_fabricated_by_Pd-In_metal_bonding_and_laser_lift-off/links/00b4952b88fe92f598000000.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
