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Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition ( MOCVD )
| Content Provider | Semantic Scholar |
|---|---|
| Author | Weyher, Jan L. Brown, Paul D. Zauner, A. R. A. Mu, Shicheng Ller Boothroyd, Chris B. Foord, D. T. Hageman, P. R. Humphreys, Colin J. Larsen, Peter Kastmand Grzegory, Izabella Porowski, S. |
| Copyright Year | 1999 |
| Abstract | MOCVD-grown GaN on the N-polar surface of GaN substrates has been found to exhibit gross hexagonal pyramidal features (typically 10}50 lm in size depending on layer thickness). The evolution of the pyramidal defects is dominated by the growth rate of an emergent core of inversion domain (typically 100 nm in size). The inversion domains nucleate at a thin band of oxygen containing amorphous material (2}5 nm in thickness), being remnant contamination from the mechano-chemical polishing technique used to prepare the substrates prior to growth. Apart from pyramidal hillocks, the #at-topped hillocks are also formed. The arguments are presented on the association between these features and the core dislocations, which constitute the source of the growth steps. Improvement in the substrate polishing procedures allowed the e!ective elimination of these surface hillocks. ( 1999 Elsevier Science B.V. All rights reserved. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www.er-c.org/cbb/publications/pdf/%2089%20J%20Crystal%20Growth%2099.pdf |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Accidents, Chemical Chemical vapor deposition Dislocations Emergence Etching (microfabrication) Excretory function Glycyrrhiza uralensis Metalorganic vapour phase epitaxy Oxygen Pyramidal Cells Remnant Thickness (graph theory) gallium nitrate newton |
| Content Type | Text |
| Resource Type | Article |
