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Effect of Silicon Doping in GaAs1−xNx /GaAs Quantum Well Observed by Photoluminescence Measurement
| Content Provider | Semantic Scholar |
|---|---|
| Author | Hamdouni, A. Bousbih, F. Bouzid, S. Ben Aloulou, S. Harmand, Jean Christophe Chtourou, Radhouane |
| Copyright Year | 2006 |
| Abstract | In this work, we report the experimental results on the effect of silicon in low-temperature photoluminescence spectra (LTPL) of a set of GaAs1−xNx/AlGaAs heterostructure with modulation doped. These samples were grown on (001) oriented GaAs substrates by molecular beam epitaxy (MBE) with different nitrogen composition. The Si-doped effect has been analyzed by photoluminescence (PL) measurements. At low power excitation density the PL spectra of undoped quantum wells (QW) are formed by GaAsN band level and several features attributed to the nitrogen localized states. For the Si-doped quantum wells, the GaAsN band level disappears and the large band attributed to the nitrogen localized states changes the form. At high power excitation density, the PL spectrum is formed by only one peak corresponding to the most dominating nitrogen localized state. With comparison between the doped and undoped QWs, we note that the presence of silicon in the structure reduce the exciton bound energy to the nitrogen localized states. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www.setit.rnu.tn/last_edition/setit2007/E/252.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
