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Simulation and analysis of 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain-compensated barriers
| Content Provider | Semantic Scholar |
|---|---|
| Author | Chang, Yi-An Kuo, Hao-Chung Chang, Ya-Hsien Wang, S. C. Laih, L. H. |
| Copyright Year | 2005 |
| Abstract | In this article, the laser performance of the 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum well lasers with various GaAs1-xNx strain compensated barriers (x=0%, 0.5%, 1%, and 2%) have been numerically investigated with a laser technology integrated simulation program. The simulation results suggest that with x=0% and 0.5% can have better optical gain properties and high characteristic temperature coefficient T0 values of 110 K and 94 K at the temperature range of 300-370 K. As the nitrogen composition in GaAs1-xNx barrier increases more than 1% the laser performance degrades rapidly and the T0 value decreases to 87 K at temperature range of 300-340 K. This can be attributed to the decrease of conduction band carrier confinement potential between In0.4Ga0.6As0.986N0.014 QW and GaAs1-xNx barrier and the increase of electronic leakage current. Finally, the temperature dependent electronic leakage current in the InGaAsN/GaAs1-xNx quantum-well lasers are also investigated. |
| File Format | PDF HTM / HTML |
| DOI | 10.1117/12.577321 |
| Alternate Webpage(s) | https://ir.nctu.edu.tw/bitstream/11536/18328/1/000227356800007.pdf |
| Alternate Webpage(s) | https://doi.org/10.1117/12.577321 |
| Volume Number | 5628 |
| Journal | SPIE/COS Photonics Asia |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
