Loading...
Please wait, while we are loading the content...
Similar Documents
Relaxation Phenomena in GaN/ AlN/ 6H-SiC Heterostructures
| Content Provider | Semantic Scholar |
|---|---|
| Author | Edwards, Nancy V. Batchelor, A. D. Buyanova, Irina B. Madsen, Lynnette D. Bremser, Michael D. Davis, Robert F. Aspnes, David E. Monemar, Bo |
| Copyright Year | 1998 |
| Abstract | We have developed a method to modulate the strain state (normally > 4 kbar, tensile) of moderately thick (~2 μm) GaN based structures grown on 6H-SiC to a range 0 to -2 kbar of compressive stresses by introducing a strain-mediating layer (SML) above the standard high-temperature AlN buffer layer. The strain characteristics of subsequently deposited nitride layers can be modulated by changing the growth parameters of the SML layer. This is achieved by in-situ techiniques during crystal growth without degrading the optical and structural properties of the deposited layers. |
| File Format | PDF HTM / HTML |
| DOI | 10.1557/PROC-537-G3.78 |
| Volume Number | 537 |
| Alternate Webpage(s) | https://www.cambridge.org/core/services/aop-cambridge-core/content/view/2F6AFC2B38F08D13643D081B628BD583/S1092578300002830a.pdf/div-class-title-relaxation-phenomena-in-gan-aln-6h-sic-heterostructures-div.pdf |
| Alternate Webpage(s) | https://doi.org/10.1557/PROC-537-G3.78 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
