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Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H-SiC
| Content Provider | Scilit |
|---|---|
| Author | Keller, Stacia Fichtenbaum, Nicholas Wu, Feng Lee, Grace Baars, Steven P. Den Speck, James S. Mishra, Umesh K. |
| Copyright Year | 2006 |
| Description | Journal: Japanese Journal of Applied Physics The metalorganic chemical vapor deposition of AlN and GaN on C-face 6H–SiC was investigated. Similar to the procedure on Si-face SiC, GaN films were fabricated in a two-step process, where first a thin AlN base layer was deposited prior to the growth of the main GaN layer. Polarity conversion from the expected N-polar AlN and GaN to Al-polar AlN and Ga-polar GaN films was observed when the AlN base layers were deposited using a low ammonia to trimethylaluminum ratio of 250 during growth. The properties of the resulting Ga-face GaN-films were similar to those grown on Si-face SiC. Hexagonal surface features were seen on the N-polar AlN and GaN films obtained with a high V/III-ratio during AlN growth. |
| Related Links | http://iopscience.iop.org/article/10.1143/JJAP.45.L322/pdf |
| Ending Page | L325 |
| Page Count | 4 |
| Starting Page | L322 |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.45.l322 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | No. 11 |
| Volume Number | 45 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2006-03-10 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Cultural Studies Polar Aln Aln and Gan Gan Films |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
