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Synthesis and Characterization of ZnO and Al-doped ZnO Nanostructures at Different Annealing Temperatures
| Content Provider | Semantic Scholar |
|---|---|
| Author | Attanayake, Sameera Okaya, Masayuki Murakami, Kenji |
| Copyright Year | 2017 |
| Abstract | ZnO is a remarkable semiconductor material which has several captivating properties such as high conductivity, high transparency, direct wide bandgap (3.37 eV), high exciton binding energy (60 meV) at room temperature, high availability, low cost and availability of many nanostructures (nanoflowers, nanorods). Due to those properties ZnO is widely used in the fields of transparent conducting electrodes, field emission devices, chemical gas sensors, optoelectronic devices, piezoelectric devices, electrical and optical switching devices, flat screen displays and sun screens. Incorporation of a dopant such as Al could enhance its optical, electrical and thermal properties by generating extra electrons. Many researchers have found that structural & morphological properties of ZnO nanorods highly depend on the annealing temperature. In this report, ZnO nanostructures were synthesized by using the Advance Spray Pyrolysis Deposition (ASPD) technique with rotational, pulsed and atomized modes. This technique can control many deposition conditions such as nozzle height, deposition angle, rotation speed, number of rotations and time interval. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://confit.atlas.jp/guide/event-img/jsap2017a/7a-A202-7/public/pdf?type=in |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
