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Magnetoresistance Effect of Magnetic Tunnel Junction with Co2Ti0.5Mn0.5Al Full-Heusler Alloy Thin Film
| Content Provider | Semantic Scholar |
|---|---|
| Author | Sasaki, Akihiro Tezuka, Nobuki Sugimoto, Satoshi Okubo, Akinari Umetsu, Rie Y. Kainuma, R. |
| Copyright Year | 2009 |
| Abstract | We investigated the magnetoresistance effect for a magnetic tunnel junction(MTJ) using a Co2Ti0.5Mn0.5Al electrode on a Cr buffered MgO(001) single crystal substrate. The Co2Ti0.5Mn0.5Al formed an ordered L21 and B2 structures after postannealing above 873 K and below 773 K, respectively. Maximum magnetization and minimum coercivity were exhibited in Co2Ti0.5Mn0.5Al annealed at 673 K. The MTJ using a Co2Ti0.5Mn0.5Al electrode with B2 structure exhibited tunnel magnetoresistance(TMR) ratio of 37 at room temperature and 60 at 5 K. The TMR ratio was larger than that of MTJ using a Co2Ti0.5Mn0.5Al electrode with L21 structure in this study. |
| File Format | PDF HTM / HTML |
| DOI | 10.2320/jinstmet.73.670 |
| Alternate Webpage(s) | http://www.jim.or.jp/journal/j/pdf3/73/09/670.pdf |
| Alternate Webpage(s) | https://doi.org/10.2320/jinstmet.73.670 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |