Loading...
Please wait, while we are loading the content...
Similar Documents
Tunnel magnetoresistance in epitaxial magnetic tunnel junctions using full-Heusler alloy Co2MnGe thin film and MgO tunnel barrier
| Content Provider | Semantic Scholar |
|---|---|
| Author | Marukame, T. Ishikawa, Takayuki Matsuda, Ken-Ichi Uemura, Tetsuya Yamamoto, Masafumi |
| Copyright Year | 2006 |
| Abstract | We fabricated fully epitaxial magnetic tunnel junctions (MTJs) using a Co-based full-Heusler alloy Co2MnGe (CMG) thin film as a lower electrode, an MgO tunnel barrier, and a Co50Fe50 upper electrode and investigated their tunnel magnetoresistance (TMR) characteristics. The microfabricated MTJs showed strongly temperature-dependent TMR characteristics with typical TMR ratios of 70% at 7 K and 14% at room temperature (RT). Furthermore, the TMR characteristics exhibited the following notable features in the bias voltage (V) dependence: (1) a cusplike V dependence within a range of ∼±200mV around V=0 at 7 K, which was smeared out at RT, and (2) a V dependence with pronounced asymmetry regarding the polarity, showing negative TMR ratios in a certain negative bias voltage range around −400mV at both 7 K and RT (V was defined with respect to the lower CMG electrode). A possible transport mechanism leading to the notably asymmetric V dependence along with the negative TMR for a certain bias voltage region is dire... |
| Starting Page | 8 |
| Ending Page | 8 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.2167063 |
| Volume Number | 99 |
| Alternate Webpage(s) | https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/13458/1/JAP08A904_marukane.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.2167063 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
