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Design of a Low Noise Amplifier in 0 . 18 μ m SiGe BiCMOS Technology
| Content Provider | Semantic Scholar |
|---|---|
| Author | Wang, Wenchun Hu, Feng Bao, Xiaoyuan Chen, Li Huang, Mengjia |
| Copyright Year | 2017 |
| Abstract | A 60GHz LNA with a three stage single ended is designed in 0.18μm SiGe BiCMOS technology. The LC resonance is used in the inter stage matching to reduce the transmission loss,by adding a parallel capacitor between two poles to reduce the effect of parasitic.From the simulation results,we can draw a conclusion that:S21 and the Noise Figure are achieved 21.6dB and 5.5dB respectively, in operating frequency of 60 GHz, both input and output return losses S11 and S22 are below -10dB from 55GHz to 65 GHz,the pow consumption only 12.8mw with supply voltage of 3.3V. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www.ijscience.org/download/IJS-4-2-127-131.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
