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A 20-GHz low-noise amplifier with active balun in a 0.25-/spl mu/m SiGe BICMOS technology
| Content Provider | Semantic Scholar |
|---|---|
| Author | Welch, Bart Kornegay, K. Park, Hyun-Min Laskar, J. |
| Copyright Year | 2005 |
| Abstract | A 20-GHz low-noise amplifier (LNA) with an active balun fabricated in a 0.25-/spl mu/m SiGe BICMOS (f/sub t/=47 GHz) technology was presented by the authors in 2004. The LNA achieves close to 7 dB of gain and a noise figure of 4.9 dB with all ports simultaneously matched to 50 /spl Omega/ with better than -16 dB of return loss. The amplifier is highly linear with an IP/sub 1dB/ of 0 dBm and IIP/sub 3/ of 9 dBm, while consuming 14 mA of quiescent current from a 3.3-V rail, with temperature-compensated biasing. To the authors' knowledge, the LNA delivers the lowest reported noise figure and highest linearity for a silicon implementation of a combined active balun and LNA at 20 GHz, and is the first implementation of an active balun with an LC degenerated emitter-coupled pair. Here we expand on that work, with an analysis of the balun operation and noise optimization of the design. |
| Starting Page | 2092 |
| Ending Page | 2097 |
| Page Count | 6 |
| File Format | PDF HTM / HTML |
| Volume Number | 40 |
| Alternate Webpage(s) | http://www.csie.ncue.edu.tw/csie/ic/Seminar_new/9401/940929/940929_02.pdf |
| Journal | IEEE Journal of Solid-State Circuits |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
