NDLI: Effects of Sulfide Passivation on the Performance of GaAs MISFETs with Photo-CVD Grown P3N5 Gate Insulators

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Effects of Sulfide Passivation on the Performance of GaAs MISFETs with Photo-CVD Grown P3N5 Gate Insulators

Content Provider	Semantic Scholar
Author	Jeong, Yoon-Ha Choi, Kihwan Jo, Seong– Kue Kang, Bongkoo
Copyright Year	1995
Abstract	Accumulation-mode and depletion-mode GaAs metal-insulator-semiconductor field-effect transistors (MISEETs), with sulfur-treatment and a photochemical vapor-deposited- P3N5 gate insulator, have been successfully fabricated. The devices have good linearity, low hysteresis in current-voltage characteristics, and the instability of the current less than 22 percent for the period of 1.0-1.0×104 s. The effective electron mobility and extrinsic transconductance of the FETs at room temperature are about 1300 cm2/Vs and 1.41 mS/mm for the accumulation-mode, and about 4500 cm2/Vs and 4 mS/mm for the depletion-mode, respectively. Capacitance-voltage (C-V) characteristics and Auger electron spectroscopy (AES) analysis for different sulfur-treatment conditions are discussed. The atomic concentration ratios of sulfur and oxygen to arsenide on GaAs surfaces and GaAs metal-insulator-semiconductor (MIS) interface properties are critically dependent on sulfur pretreatment conditions, and the optimum sulfur-treatment temperature is determined to be about 40° C. The minimum density of interface trap states for an Al/P3N5/GaAs MIS diode with the optimized surface treatment is about 4.3×1010 cm-2 eV-1.
Starting Page	1176
Ending Page	1180
Page Count	5
File Format	PDF HTM / HTML
DOI	10.1143/JJAP.34.1176
Alternate Webpage(s)	https://confit.atlas.jp/guide/event-img/ssdm1994/C-6-5/public/pdf_archive?type=in
Alternate Webpage(s)	https://doi.org/10.1143/JJAP.34.1176
Volume Number	34
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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