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Single crystal growth and transport properties of Cu-doped topological insulator Bi 2 Se 3
| Content Provider | Semantic Scholar |
|---|---|
| Author | Li, Zhao Ji Liu, Yachao White, Seth C. Wahl, Peter Jiang, Min Hong |
| Copyright Year | 2013 |
| Abstract | We report on the growth of high quality single crystals of CuxBi2Se3 with x=0, 0.12 and 0.15, using Bridgman method. A study of crystal structure shows that the c-lattice parameter slightly decreases with an increasing level of Cu-doping. STM images indicate that both Cu-intercalation between Se-Se layers and Cu-substitution in Bi-layer sites are present. With dc magnetization measurements, superconducting transitions in Cu-intercalated Bi2Se3 have been found with a TC of 3.5 K for x~0.12 and approximately 3.6 K for x~0.15, respectively. The resistivity data show metallic behavior in the Bi2Se3 crystals and paramagnetic features are observed in the low temperature region of the Cu-doped samples. © 2011 Published by Elsevier Ltd. Selection and/or peer-review under responsibility of Horst Rogalla and Peter Kes. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://core.ac.uk/download/pdf/82258246.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
