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Atomistic Quantum Transport Simulation of Topological Insulator Bi 2 Se 3 Tunnel FETs
| Content Provider | Semantic Scholar |
|---|---|
| Author | Chang, Jiwon Register, Leonard Franklin Banerjee, Sanjay K. |
| Copyright Year | 2013 |
| Abstract | Three-dimensional (3-D) topological insulators (TI) are characterized by the presence of metallic surface states and a bulk band gap. Recently theoretical and experimental studies have shown an induced gap in the surface state bands of TI thin films. The gap results from interaction of conduction band (CB) and valence band (VB) surface states from the opposite surfaces of a thin film, and its size is determined by the thin film thickness. This gap opening could open the possibility of TIbased MOSFETs and band-to-band tunnel FETs. In this work we consider the latter. Specifically, we explore the transport properties of lateral tunnel FETs based on Bi2Se3, one of the most promising TI materials, using quantum ballistic transport simulations with the tight-binding Hamiltonian in the atomic orbital basis. Keywords-component; topological insulator, tunnel FET, atomistic, quantum transport |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://in4.iue.tuwien.ac.at/pdfs/sispad2012/3-1.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
