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Invited) Scaling and Optimization of Ferroelectric Hafnium Oxide for Memory Applications and Beyond
| Content Provider | Semantic Scholar |
|---|---|
| Author | Mueller, Johannes Polakowski, P. Riedel, Stefan |
| Copyright Year | 2015 |
| Abstract | Ferroelectric hafnium oxide based systems have emerged as a new class of CMOS-compatible, scalable, 3D-capable and lead-free ferroelectrics striving to renew the scaling potential of ferroelectric memories. However, considering the multitude of unique physical characteristics provided by ferroelectrics and the industrial acceptance of HfO2 and ZrO2 based systems a much broader application space can be envisioned. Especially ferroelectric HfO2-ZrO2 thin films and its laminates with Al2O3 provide the flexibility and manufacturability required for an application specific tailoring of material properties. |
| File Format | PDF HTM / HTML |
| DOI | 10.7567/ssdm.2015.o-2-1 |
| Alternate Webpage(s) | https://confit.atlas.jp/guide/event-img/ssdm2015/O-2-1/public/pdf_archive?type=in |
| Alternate Webpage(s) | https://doi.org/10.7567/ssdm.2015.o-2-1 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
