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Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films
| Content Provider | Semantic Scholar |
|---|---|
| Author | Zhou, Dayu Guan, Yan Vopson, Melvin M. Liang, Hailong Dong, Xianlin Mueller, Johannes Schenk, Tony Schroeder, Uwe |
| Copyright Year | 2015 |
| Abstract | HfO2-based binary lead-free ferroelectrics show promising properties for non-volatile memory applications, providing that their polarization reversal behavior is fully understood. In this work, temperature-dependent polarization hysteresis measured over a wide applied field range has been investigated for Si-doped HfO2 ferroelectric thin films. Our study indicates that in the low and medium electric field regimes (E 2Ec), a non-equilibrium nucleation-limited-switching mechanism dominates the reversal process. The optimum field for ferroelectric random access memory (FeRAM) applications was determined to be around 2.0 MV/cm, which translates into a 2.0 V potential applied across the 10 nm thick films. |
| Starting Page | 240 |
| Ending Page | 246 |
| Page Count | 7 |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/j.actamat.2015.07.035 |
| Alternate Webpage(s) | https://researchportal.port.ac.uk/portal/files/2835363/Paper_Acta_Materialia_2015.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/j.actamat.2015.07.035 |
| Volume Number | 99 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
