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Zero Field Spin Splitting in GaN/AlGaN Heterostructures Probed by the Weak Antilocalization
| Content Provider | Semantic Scholar |
|---|---|
| Author | Dybko, Krzysztof Siekacz, Marcin Skierbiszewski, Czeslaw |
| Copyright Year | 2008 |
| Abstract | We present the magnetoconductivity measurements of a high mobility two-dimensional electron gas confined at GaN/AlGaN interface. The sensitive measurements of low field conductivity revealed both quantum corrections, the weak localization and antilocalization effects. It indicates the importance of the spin–orbit coupling in this wide band gap material. The analysis of the data provided the information about the temperature dependence of the dephasing time and total spin–orbit relaxation time. The conduction band spin splitting energy amounts to 0.23 meV and 0.35 meV at electron densities 2.2× 10 cm−2 and 5.7× 10 cm−2, respectively. |
| Starting Page | 1109 |
| Ending Page | 1113 |
| Page Count | 5 |
| File Format | PDF HTM / HTML |
| DOI | 10.12693/APhysPolA.114.1109 |
| Volume Number | 114 |
| Alternate Webpage(s) | http://przyrbwn.icm.edu.pl/APP/PDF/114/a114z517.pdf |
| Alternate Webpage(s) | https://doi.org/10.12693/APhysPolA.114.1109 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |