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Surfactant effects of gallium on quality of AlN epilayers grown via metal-organic chemical-vapour deposition on SiC substrates
| Content Provider | Semantic Scholar |
|---|---|
| Author | Tahtamouni, Talal Al Li, Jianpin Lin, Jingyu Jiang, Hongxing |
| Copyright Year | 2012 |
| Abstract | Effects of gallium as a surfactant for the growth of AlN epilayers on SiC substrates by metal-organic chemical-vapour deposition have been studied. It was found that the use of gallium as a surfactant enables the growth of thick, crack-free AlN epilayers on SiC substrates. The photoluminescence and x-ray diffraction (XRD) analysis show that gallium surfactant can reduce some of the tensile strain in AlN epilayers and it improves the surface smoothness. XRD rocking curves yielded decreased full widths at half maximum for the (1 0 5) and (0 0 2) reflections, indicating a reduction in threading dislocation density in the AlN epilayers. |
| Starting Page | 285103 |
| Ending Page | 285103 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1088/0022-3727/45/28/285103 |
| Volume Number | 45 |
| Alternate Webpage(s) | http://www2.ece.ttu.edu/nanophotonics/papers/Ga-surfactant-paper.pdf |
| Alternate Webpage(s) | http://www.depts.ttu.edu/ece/nanophotonics/papers/Ga-surfactant-paper.pdf |
| Alternate Webpage(s) | https://doi.org/10.1088/0022-3727%2F45%2F28%2F285103 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
